US 11,915,983 B2
Structures and methods of fabricating electronic devices using separation and charge depletion techniques
Leo Mathew, Austin, TX (US); Rajesh Rao, Austin, TX (US); Daniel Fine, Austin, TX (US); and Vishal Trivedi, Chandler, AZ (US)
Assigned to APPLIED NOVEL DEVICES, INC., Austin, TX (US)
Filed by Applied Novel Devices, Inc., Austin, TX (US)
Filed on Jan. 25, 2023, as Appl. No. 18/101,134.
Application 18/101,134 is a division of application No. 16/931,051, filed on Jul. 16, 2020, granted, now 11,610,819.
Prior Publication US 2023/0170263 A1, Jun. 1, 2023
Int. Cl. H01L 21/8238 (2006.01); H01L 21/78 (2006.01); H01L 27/092 (2006.01)
CPC H01L 21/823807 (2013.01) [H01L 21/7806 (2013.01); H01L 21/823828 (2013.01); H01L 27/092 (2013.01)] 11 Claims
OG exemplary drawing
 
1. A method of forming an electronic device, comprising:
forming a plurality of channel structures over a first side of a semiconductor substrate, the plurality of channel structures substantially perpendicular to the first side of the semiconductor substrate;
forming gate dielectric regions over a portion of the plurality of channel structures and planar regions;
forming gate electrode regions over a portion of the gate dielectric regions;
forming source regions and body tie regions on the walls of the plurality of channel structures;
forming dielectric regions over the gate electrode regions to electrically isolate the gate electrode regions from the source regions;
forming a first metallic layer over the first side of the semiconductor substrate;
inducing stress within the semiconductor substrate by annealing and/or cooling the semiconductor substrate and the first metallic layer;
separating a first portion of the semiconductor substrate and the first metallic layer from a second portion of the semiconductor substrate;
forming backside metal regions over the first portion of the semiconductor substrate, the backside metal regions capable of being drain metal electrode contacts; and
etching portions of the first metallic layer to form gate metal electrode contacts and source metal electrode contacts.