US 11,915,929 B2
Methods for selectively forming a target film on a substrate comprising a first dielectric surface and a second metallic surface
Delphine Longrie, Ghent (BE); Shaoren Deng, Leuven (BE); and Jan Willem Maes, Wilrijk (BE)
Assigned to ASM IP Holding B.V., Almere (NL)
Filed by ASM IP Holding B.V., Almere (NL)
Filed on Jul. 26, 2022, as Appl. No. 17/873,369.
Application 17/873,369 is a continuation of application No. 17/096,444, filed on Nov. 12, 2020, granted, now 11,450,529.
Claims priority of provisional application 62/940,705, filed on Nov. 26, 2019.
Prior Publication US 2022/0367185 A1, Nov. 17, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 21/02 (2006.01); H01L 21/027 (2006.01); H01L 21/3213 (2006.01)
CPC H01L 21/02636 (2013.01) [H01L 21/0262 (2013.01); H01L 21/0273 (2013.01); H01L 21/32136 (2013.01); H01L 21/32139 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method for selectively forming a target film on a substrate comprising a first dielectric surface and a second metallic surface, the method comprising:
forming a plasma generated from a hydrogen containing gas;
using a cyclical deposition process selectively forming a passivation film from vapor phase reactants on the first dielectric surface relative to the second metallic surface; and
selectively depositing the target film from vapor phase reactants on the second metallic surface relative to the passivation film.