CPC H01L 21/02203 (2013.01) [C23C 16/0245 (2013.01); C23C 16/045 (2013.01); C23C 16/403 (2013.01); C23C 16/45525 (2013.01); H01L 21/02178 (2013.01); H01L 21/02181 (2013.01); H01L 29/408 (2013.01)] | 14 Claims |
1. A method to synthesize a porous thin film, the method comprising:
performing an oxidation process to remove carbon impurities from a framework such that pores are formed in the framework, each of the pores extending from an upper surface of the framework to a bottom surface contained in the framework; and
doping the framework by performing a high aspect ratio (HAR) atomic layer deposition (ALD) process to deposit a pore-coating film that coats sidewalls and a bottom surface of the pores,
wherein the HAR ALD process uses an oxidizer and is performed at a low temperature ranging from about 50 degrees Celsius (50° C.) to about 250° C. so as to form organic impurities comprising a carbon material, and
wherein a thickness of the pore-coating film defines an inner thickness of the pores.
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9. A method to synthesize a porous thin film, the method comprising:
forming a non-organic framework including a plurality of organic impurities, the organic impurities extending from a first end located at an upper surface of the framework to a second end contained in the framework;
removing the organic impurities to form pores extending from the upper surface of the framework to a bottom surface contained in the framework; and
coating sidewalls and the bottom surface of the pores with a pore-coating film,
wherein forming the non-organic framework includes performing an atomic layer deposition (ALD) process to deposit a metal oxide material on a substrate, the ALD process using an oxidizer that is performed at a low temperature ranging from about 50 degrees Celsius (50° C.) to about 250° C. so as to form the organic impurities comprising a carbon material.
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