US 11,915,918 B2
Cleaning of sin with CCP plasma or RPS clean
Jothilingam Ramalingam, Sunnyvale, CA (US); Yong Cao, San Jose, CA (US); Ilya Lavitsky, San Francisco, CA (US); Keith A. Miller, Mountain View, CA (US); Tza-Jing Gung, San Jose, CA (US); Xianmin Tang, San Jose, CA (US); Shane Lavan, Palo Alto, CA (US); Randy D. Schmieding, Saratoga, CA (US); John C. Forster, Mt. View, CA (US); and Kirankumar Neelasandra Savandaiah, Karnataka (IN)
Assigned to APPLIED MATERIALS, INC., Santa Clara, CA (US)
Filed by Applied Materials, Inc., Santa Clara, CA (US)
Filed on Jun. 29, 2021, as Appl. No. 17/362,925.
Prior Publication US 2022/0415636 A1, Dec. 29, 2022
Int. Cl. H01J 37/34 (2006.01); C23C 14/56 (2006.01); H01J 37/32 (2006.01); C23C 14/54 (2006.01)
CPC H01J 37/3488 (2013.01) [C23C 14/54 (2013.01); C23C 14/564 (2013.01); H01J 37/32357 (2013.01); H01J 37/3435 (2013.01); H01J 37/3441 (2013.01); H01J 37/3447 (2013.01); H01J 37/32091 (2013.01)] 8 Claims
OG exemplary drawing
 
1. A processing chamber comprising:
a target backing plate in a top portion of the processing chamber;
a substrate support in a bottom portion of the processing chamber, the substrate support having a support surface spaced a distance from the target backing plate to form a process cavity;
a deposition ring positioned at an outer periphery of the substrate support, the deposition ring having an outer portion with a contoured shape; and
a shield forming an outer bound of the process cavity, the shield having a top shield end in the top portion of the processing chamber and a bottom shield end in the bottom portion of the processing chamber, the top end positioned around a periphery of the target backing plate and the bottom end positioned around a periphery of the substrate support, the bottom end including a contoured surface having a complementary shape to the outer portion of the deposition ring;
a sealing bracket positioned on an opposite side of the substrate support from the target backing plate so that the deposition ring is between the target backing plate and the sealing bracket; and
a bellows assembly having a top bellows flange, a bellows and a bottom bellows flange, the top bellows flange located below and attached to the shield bottom end next to the contoured surface on an outer side of the shield bottom end,
wherein the top portion of the processing chamber comprises a top gas flow path between a periphery of the target backing plate and the top of the shield, and
the bottom portion of the processing chamber comprises a bottom gas flow path between the shield and the deposition ring, and
wherein the deposition ring and sealing bracket are movable between a process position where there is a gap between the sealing bracket and the deposition ring and a gap between a bottom bellows flange of the bellows assembly and the sealing bracket, and a cleaning position where the sealing bracket contacts the bottom bellows flange of the bellows assembly.