US 11,915,914 B2
Film forming method and film forming apparatus
Sena Fujita, Nirasaki (JP); and Hiroki Murakami, Nirasaki (JP)
Assigned to Tokyo Electron Limited, Tokyo (JP)
Filed by Tokyo Electron Limited, Tokyo (JP)
Filed on Oct. 31, 2022, as Appl. No. 18/051,097.
Claims priority of application No. 2021-179687 (JP), filed on Nov. 2, 2021; and application No. 2022-147033 (JP), filed on Sep. 15, 2022.
Prior Publication US 2023/0135342 A1, May 4, 2023
Int. Cl. C23C 16/08 (2006.01); C23C 16/34 (2006.01); C23C 16/40 (2006.01); C23C 16/455 (2006.01); C23C 16/505 (2006.01); C23C 16/52 (2006.01); H01J 37/32 (2006.01); H01L 21/02 (2006.01); H01L 21/32 (2006.01)
CPC H01J 37/32449 (2013.01) [C23C 16/08 (2013.01); C23C 16/34 (2013.01); C23C 16/405 (2013.01); C23C 16/45529 (2013.01); C23C 16/45536 (2013.01); C23C 16/45542 (2013.01); C23C 16/505 (2013.01); C23C 16/52 (2013.01); H01L 21/02112 (2013.01); H01L 21/02274 (2013.01); H01L 21/0228 (2013.01); H01L 21/32 (2013.01)] 24 Claims
OG exemplary drawing
 
1. A film forming method comprising:
preparing a substrate having a surface on which a first film containing boron and a second film made of a material different from that of the first film are formed;
supplying a raw material gas, which contains halogen and an element X other than halogen, to the surface of the substrate; and
supplying a plasmarized reaction gas, which contains oxygen, to the surface of the substrate,
wherein a third film as an oxide film of the element X is selectively formed on the second film with respect to the first film by alternately supplying the raw material gas and the plasmarized reaction gas.