US 11,915,785 B2
Memory sub-system management based on dynamic control of wordline start voltage
Jiangang Wu, Milpitas, CA (US); Lei Zhou, Shanghai (CN); Jung Sheng Hoei, Newark, CA (US); Kishore Kumar Muchherla, Fremont, CA (US); and Qisong Lin, El Dorado Hills, CA (US)
Assigned to Micron Technology, Inc., Boise, ID (US)
Appl. No. 17/415,657
Filed by MICRON TECHNOLOGY, INC., Boise, ID (US)
PCT Filed Jan. 26, 2021, PCT No. PCT/CN2021/073765
§ 371(c)(1), (2) Date Jun. 17, 2021,
PCT Pub. No. WO2022/160091, PCT Pub. Date Aug. 4, 2022.
Prior Publication US 2023/0230624 A1, Jul. 20, 2023
Int. Cl. G11C 16/10 (2006.01); G11C 7/10 (2006.01); G11C 8/08 (2006.01); G11C 8/14 (2006.01)
CPC G11C 7/1096 (2013.01) [G11C 8/08 (2013.01); G11C 8/14 (2013.01); G11C 16/10 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method comprising:
receiving a request to perform a write operation at a memory device, wherein the memory device comprises a plurality of memory segments, each of the plurality of memory segments comprising a plurality of memory pages;
retrieving, from the memory device, current wordline start voltage (WLSV) information associated with a particular memory segment of the plurality of memory segments;
performing the write operation on the particular memory segment;
storing, in a firmware record in a memory sub-system controller, information indicative of a last written memory page associated with the particular memory segment on which the write operation is performed; and
managing the firmware record comprising a plurality of entries in view of the information indicative of the last written memory page associated with the performed write operation, wherein each entry of the plurality of entries of the firmware record comprises one or more identifying indicia associated with a respective memory segment, at least one of the identifying indicia being a wordline start voltage (WLSV) associated with the respective memory segment.