US 11,915,777 B2
Integrated assemblies and methods forming integrated assemblies
Che-Chi Lee, Boise, ID (US); Terrence B. McDaniel, Boise, ID (US); Kehao Zhang, Boise, ID (US); Albert P. Chan, Boise, ID (US); Clement Jacob, Boise, ID (US); Luca Fumagalli, Boise, ID (US); and Vinay Nair, Boise, ID (US)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Feb. 10, 2022, as Appl. No. 17/669,189.
Application 17/669,189 is a continuation of application No. 17/307,686, filed on May 4, 2021, granted, now 11,282,548.
Prior Publication US 2022/0358971 A1, Nov. 10, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. G11C 11/24 (2006.01); G11C 5/10 (2006.01); H01L 49/02 (2006.01); G11C 11/405 (2006.01); H01L 27/06 (2006.01); H10B 12/00 (2023.01)
CPC G11C 5/10 (2013.01) [G11C 11/405 (2013.01); H01L 27/0688 (2013.01); H01L 28/60 (2013.01); H10B 12/30 (2023.02)] 21 Claims
OG exemplary drawing
 
1. An integrated assembly, comprising:
a first source/drain region, and a second source/drain laterally offset from the first source/drain region;
first and second metal compositions directly adjacent respective lateral surfaces of the first and second source/drain regions;
a laterally-extending first capacitor electrode coupled with the first metal composition;
a laterally-extending second capacitor electrode coupled with the second metal composition;
capacitor dielectric material lining the first and second capacitor electrodes; and
a shared capacitor electrode extending between the first and second capacitor electrodes and incorporated into respective first and second laterally-extending capacitors.