US 11,914,471 B1
Block failure protection for zone memory system
Sanjay Subbarao, Irvine, CA (US)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Aug. 30, 2022, as Appl. No. 17/823,365.
Int. Cl. H03M 13/11 (2006.01); H03M 13/00 (2006.01); H03M 13/03 (2006.01); H04L 1/1812 (2023.01); H04L 1/00 (2006.01); G06F 11/10 (2006.01); G06F 11/14 (2006.01); G06F 11/07 (2006.01)
CPC G06F 11/1068 (2013.01) [G06F 11/0793 (2013.01); G06F 11/1435 (2013.01)] 20 Claims
OG exemplary drawing
 
20. A method comprising:
writing a set of user data to a select non-parity zone of a plurality of zones of a memory device, each zone of the plurality of zones having a parity cursor and a write cursor, a parity cursor of an individual zone comprising a value that indicates how much space of the individual zone from a beginning of the individual zone is already parity protected, a write cursor of the individual zone comprising a value that indicates where data was last written to in the individual zone;
updating a write cursor of the select non-parity zone based on the writing of the set of user data;
determining whether the write cursor of the select non-parity zone has a greater value than that of a parity cursor of the select non-parity zone; and
in response to the write cursor of the select non-parity zone having a greater value than that of the parity cursor of the select non-parity zone:
scanning at least a portion of the plurality of zones to find a predetermined number of non-parity zones that have parity cursors with a similar value and that respectively have an individual write cursor that is greater than an individual parity cursor;
generating error correction parity data for the predetermined number of non-parity zones based on the similar value of the parity cursors of the predetermined number of non-parity zones; and
storing the error correction parity data to a select parity zone of the plurality of zones.