US 11,914,470 B2
Efficient redundancy management in key-value NAND flash storage
Moshe Twitto, Givat Shemuel (IL)
Assigned to PLIOPS LTD., Tel Aviv (IL)
Filed by Pliops Ltd., Tel Aviv (IL)
Filed on Dec. 20, 2021, as Appl. No. 17/645,312.
Application 17/645,312 is a continuation of application No. 16/228,905, filed on Dec. 21, 2018, granted, now 11,210,166.
Claims priority of provisional application 62/609,342, filed on Dec. 22, 2017.
Prior Publication US 2022/0188188 A1, Jun. 16, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. G06F 11/00 (2006.01); G06F 11/07 (2006.01); G06F 11/10 (2006.01); G06F 12/02 (2006.01); G11C 11/56 (2006.01); G11C 16/16 (2006.01); G11C 16/34 (2006.01); G11C 29/52 (2006.01)
CPC G06F 11/1068 (2013.01) [G06F 11/076 (2013.01); G06F 12/0246 (2013.01); G11C 11/5628 (2013.01); G11C 16/16 (2013.01); G11C 16/349 (2013.01); G11C 29/52 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A method for error correction of logical pages of an erase block of a solid state drive (SSD) memory, the method comprises:
determining an erase block score of the erase block, wherein the determining is based on a program erase (PE) cycle of the erase block and an erase block raw bit error rate (BER); wherein the erase block comprises pages, each page of the erase block is of a page type out of multiple page types; wherein the multiple page types comprises page types that differ from each by at least one out of (a) a bit significance, and (b) a physical location within the erase block:
retrieving a block profile, using the erase block score as a pointer, wherein the block profile lists one or more ECC parameters for each page type of the multiple page types; wherein the one or more ECC parameters comprise an overprovisioning for each one of the multiple page types; and
allocating, within each page of the erase block, an overprovisioning space and an error correction space, based on at least one of the one or more ECC parameters related to a page type of the page, the page type belongs to the multiple page types.