CPC G03F 7/0752 (2013.01) [C07F 7/1804 (2013.01); C08G 77/14 (2013.01); C08G 77/18 (2013.01); C08G 77/24 (2013.01); G03F 7/0751 (2013.01); G03F 7/0757 (2013.01); G03F 7/091 (2013.01); G03F 7/11 (2013.01); G03F 7/36 (2013.01)] | 23 Claims |
1. A composition for forming a silicon-containing resist underlayer film for EUV lithography, comprising:
a thermosetting silicon-containing material; and
a crosslinking catalyst, wherein
the thermosetting silicon-containing material comprises one or more of
a repeating unit shown by the following general formula (Sx-1′),
a repeating unit shown by the following general formula (Sx-2), and
a partial structure shown by the following general formula (Sx-3):
wherein R1 represents an iodine-containing organic group shown by the following general formula (Sx-R1):
wherein R11 represents a divalent organic group other than a methylene group; R12 represents a monovalent organic group having 1 to 10 carbon atoms, a hydroxyl group, or a halogen atom other than iodine; n1 is 1, 2, or 3; and n2 is 0, 1, or 2;
R1′ represents an iodine-containing organic group shown by the following general formula (Sx-R1′):
R2 and R3 are each independently identical to R1, a hydrogen atom, or a monovalent organic group having 1 to 30 carbon atoms, and
R11′ represents an ethylene (—CH2CH2—) group; R12′ represents a monovalent organic group having 1 to 10 carbon atoms, a hydroxyl group, or a halogen atom other than iodine; n1 is 1, 2 or 3; and n2′is 0, 1, or 2.
|