US 11,913,971 B2
Motion-sensitive field effect transistor, motion detection system, and method
Romain H. A. Feuillette, San Jose, CA (US); David C. Pritchard, Glenville, NY (US); Elizabeth Strehlow, Malta, NY (US); and James P. Mazza, Saratoga Springs, NY (US)
Assigned to GlobalFoundries U.S. Inc., Malta, NY (US)
Filed by GLOBALFOUNDRIES U.S. Inc., Malta, NY (US)
Filed on Feb. 24, 2021, as Appl. No. 17/183,432.
Prior Publication US 2022/0268805 A1, Aug. 25, 2022
Int. Cl. G01P 15/00 (2006.01); G01C 9/24 (2006.01); G01C 9/06 (2006.01); G01C 9/20 (2006.01); G01P 15/18 (2013.01); G01C 9/18 (2006.01)
CPC G01P 15/006 (2013.01) [G01C 9/06 (2013.01); G01C 9/20 (2013.01); G01C 9/24 (2013.01); G01P 15/18 (2013.01); G01C 2009/182 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A transistor comprising:
a channel region; and
a gate structure adjacent to the channel region and comprising:
a reservoir configured to contain a conductive fluid; and
at least one gate electrode at a fixed location within the reservoir, wherein an orientation of the channel region relative to a top surface of the conductive fluid depends on movement of the transistor and wherein contact between the at least one gate electrode and the conductive fluid depends upon the orientation of the channel region relative to the top surface of the conductive fluid.