US 11,912,902 B2
Composition for etching and manufacturing method of semiconductor device using the same
Jae-Wan Park, Seongnam-si (KR); Jung-Hun Lim, Seongnam-si (KR); and Jin-Uk Lee, Seongnam-si (KR)
Filed by SOULBRAIN CO., LTD., Seongnam-si (KR)
Filed on Dec. 21, 2018, as Appl. No. 16/228,780.
Application 16/228,780 is a continuation of application No. PCT/KR2017/015497, filed on Dec. 26, 2017.
Claims priority of application No. 10-2016-0178754 (KR), filed on Dec. 26, 2016; application No. 10-2016-0178757 (KR), filed on Dec. 26, 2016; application No. 10-2017-0178590 (KR), filed on Dec. 22, 2017; and application No. 10-2017-0178591 (KR), filed on Dec. 22, 2017.
Prior Publication US 2019/0136090 A1, May 9, 2019
This patent is subject to a terminal disclaimer.
Int. Cl. C09G 1/04 (2006.01); H01L 21/3105 (2006.01); H01L 21/02 (2006.01); H01L 21/311 (2006.01); H10B 43/27 (2023.01); H10B 43/35 (2023.01); H01L 21/762 (2006.01)
CPC C09G 1/04 (2013.01) [H01L 21/02458 (2013.01); H01L 21/31056 (2013.01); H01L 21/31111 (2013.01); H10B 43/27 (2023.02); H10B 43/35 (2023.02); H01L 21/76224 (2013.01)] 4 Claims
OG exemplary drawing
 
1. A composition for etching, comprising,
a first inorganic acid,
a first additive represented by Chemical Formula 1, and
a solvent,
wherein the first inorganic acid is phosphoric acid, wherein the composition for etching selectively etches a nitride layer with respect to an oxide layer,
wherein etch selectivity of the composition for etching is from 24.86 to 6512.

OG Complex Work Unit Chemistry
(In Chemical Formula 1, X is N,
R1 to R6 are each, independently, selected from the group consisting of hydrogen, a C1-C20 alkyl group, a Cl-C20 alkoxy group, a C2-C20 alkenyl group, a C3-C20 cycloalkyl group, a C1-C20 aminoalkyl group, a C6-C20 aryl group, a C1-C20 alkyl carbonyl group, a C1-C20 alkyl carbonyloxy group, and a C1-C10 cyano alkyl group).