CPC C09G 1/04 (2013.01) [H01L 21/02458 (2013.01); H01L 21/31056 (2013.01); H01L 21/31111 (2013.01); H10B 43/27 (2023.02); H10B 43/35 (2023.02); H01L 21/76224 (2013.01)] | 4 Claims |
1. A composition for etching, comprising,
a first inorganic acid,
a first additive represented by Chemical Formula 1, and
a solvent,
wherein the first inorganic acid is phosphoric acid, wherein the composition for etching selectively etches a nitride layer with respect to an oxide layer,
wherein etch selectivity of the composition for etching is from 24.86 to 6512.
(In Chemical Formula 1, X is N,
R1 to R6 are each, independently, selected from the group consisting of hydrogen, a C1-C20 alkyl group, a Cl-C20 alkoxy group, a C2-C20 alkenyl group, a C3-C20 cycloalkyl group, a C1-C20 aminoalkyl group, a C6-C20 aryl group, a C1-C20 alkyl carbonyl group, a C1-C20 alkyl carbonyloxy group, and a C1-C10 cyano alkyl group).
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