US 11,912,730 B2
Organoamino-functionalized cyclic oligosiloxanes for deposition of silicon-containing films
Matthew R. MacDonald, Laguna Niguel, CA (US); and John F. Lehmann, Schnecksville, PA (US)
Assigned to Versum Materials US, LLC, Tempe, AZ (US)
Filed by VERSUM MATERIALS US, LLC, Tempe, AZ (US)
Filed on Dec. 15, 2022, as Appl. No. 18/066,903.
Application 18/066,903 is a division of application No. 17/030,187, filed on Sep. 23, 2020, abandoned.
Application 17/030,187 is a continuation in part of application No. 16/838,997, filed on Apr. 2, 2020, abandoned.
Claims priority of provisional application 62/829,851, filed on Apr. 5, 2019.
Prior Publication US 2023/0138138 A1, May 4, 2023
Int. Cl. C23C 16/52 (2006.01); C07F 7/08 (2006.01); C23C 16/455 (2006.01); C23C 16/40 (2006.01)
CPC C07F 7/0816 (2013.01) [C23C 16/402 (2013.01); C23C 16/45553 (2013.01); C23C 16/52 (2013.01); C23C 16/45504 (2013.01)] 5 Claims
 
1. A method for depositing a film comprising silicon and oxygen onto a substrate, the method comprising the steps of:
a) providing a substrate in a reactor;
b) introducing into the reactor at least one silicon precursor compound selected from the group consisting of Formulae A-D

OG Complex Work Unit Chemistry
wherein R1 is selected from the group consisting of a linear C1 to C10 alkyl group, a branched C3 to C10 alkyl group, a C3 to C10cyclic alkyl group, a C3 to C10 heterocyclic group, a C3 to C10 alkenyl group, a C3 to C10 alkynyl group, and a C4 to C10 aryl group; R2 is selected from the group consisting of hydrogen, a C1 to C10 linear alkyl group, a branched C3 to C10 alkyl group, a C3 to C10 cyclic alkyl group, a C3 to C10 heterocyclic group, a C3 to C10 alkenyl group, a C3 to C10 alkynyl group, and a C4 to C10 aryl group, wherein R1 and R2 are either linked to form a cyclic ring structure or are not linked to form a cyclic ring structure; R3-11 are each independently selected from the group consisting of hydrogen, a linear C1 to C10 alkyl group, a branched C3 to C10 alkyl group, a C3 to C10cyclic alkyl group, a C2 to C10 alkenyl group, a C2 to C10 alkynyl group, a C4 to C10 aryl group, and an organoamino group, NR1R2, wherein R1 and R2 are defined above; n=1, 2, or 3, and m=2 or 3;
c) purging the reactor with a purge gas;
d) introducing at least one of an oxygen-containing source and a nitrogen-containing source into the reactor; and
e) purging the reactor with the purge gas,
wherein the steps b through e are repeated until a desired thickness of film is deposited;
and wherein the method is conducted at one or more temperatures ranging from about 25° C. to 600° C.