US 11,912,566 B2
Method and system for scanning MEMS cantilevers
Steven Alexander-Boyd Hickman, Seattle, WA (US); Sarah Colline McQuaide, Seattle, WA (US); Abhijith Rajiv, Mountain View, CA (US); Brian T. Schowengerdt, Seattle, WA (US); and Charles David Melville, Camano Island, WA (US)
Assigned to Magic Leap, Inc., Plantation, FL (US)
Filed by Magic Leap, Inc., Plantation, FL (US)
Filed on Apr. 24, 2023, as Appl. No. 18/138,454.
Application 18/138,454 is a continuation of application No. 17/327,700, filed on May 22, 2021, granted, now 11,661,335.
Claims priority of provisional application 63/029,258, filed on May 22, 2020.
Prior Publication US 2023/0264948 A1, Aug. 24, 2023
Int. Cl. B81C 1/00 (2006.01); G02B 26/10 (2006.01)
CPC B81C 1/0015 (2013.01) [B81C 2201/0132 (2013.01); B81C 2201/0133 (2013.01); G02B 26/103 (2013.01)] 17 Claims
OG exemplary drawing
 
10. A semiconductor substrate comprising:
a first semiconductor layer;
a first dielectric layer coupled to the first semiconductor layer;
a second semiconductor layer coupled to the first dielectric layer, wherein the second semiconductor layer comprises:
a base portion substantially aligned with the first dielectric layer; and
a cantilever portion protruding from an end of the first dielectric layer, wherein the cantilever portion comprises a tapered surface tapering from a bottom surface of the second semiconductor layer toward a top surface of the second semiconductor layer;
a second dielectric layer coupled to the second semiconductor layer; and
a third semiconductor layer coupled to the second dielectric layer.