US 12,239,034 B2
Resistive random access memory device having needle-like-shaped top electrode region and method for fabricating the same
Jheng-Hong Jiang, Hsinchu (TW); Shing-Huang Wu, Hsinchu (TW); and Chia-Wei Liu, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Feb. 15, 2022, as Appl. No. 17/671,599.
Claims priority of provisional application 63/274,932, filed on Nov. 2, 2021.
Prior Publication US 2023/0140134 A1, May 4, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H10N 70/00 (2023.01); H10B 63/00 (2023.01)
CPC H10N 70/8418 (2023.02) [H10B 63/30 (2023.02); H10N 70/021 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A resistive random access memory (RRAM) device comprising:
a bottom electrode in a first dielectric layer;
a switching layer in a second dielectric layer over the first dielectric layer, wherein a conductive path is formed in the switching layer when a forming voltage is applied; and
a needle-like-shaped top electrode region in a third dielectric layer over the second dielectric layer comprising:
an oxygen-rich dielectric layer, wherein a lower end of the oxygen-rich dielectric layer is a tip; and
a top electrode over the oxygen-rich dielectric layer.