US 12,239,028 B2
Memory cells based on superconducting and magnetic materials and methods of their control in arrays
Ivan Nevirkovets, Evanston, IL (US); and Oleg Mukhanov, Putnam Valley, NY (US)
Assigned to SeeQC, Inc., Elmsford, NY (US)
Filed by SeeQC Inc., Elmsford, NY (US)
Filed on Oct. 23, 2023, as Appl. No. 18/492,511.
Application 18/492,511 is a continuation of application No. 17/307,931, filed on May 4, 2021, granted, now 11,800,814, issued on Oct. 24, 2023.
Claims priority of provisional application 63/021,056, filed on May 6, 2020.
Prior Publication US 2024/0057484 A1, Feb. 15, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. G11C 16/04 (2006.01); G11C 11/44 (2006.01); H10N 60/12 (2023.01); H10N 60/80 (2023.01); H10N 60/84 (2023.01); H10N 69/00 (2023.01)
CPC H10N 60/84 (2023.02) [G11C 11/44 (2013.01); H10N 60/12 (2023.02); H10N 60/805 (2023.02); H10N 69/00 (2023.02)] 27 Claims
OG exemplary drawing
 
23. A memory array comprising:
a plurality of addressable memory cells, each memory cell comprising:
a magnetic junction comprising a pair of isolated magnetic layers adapted to assume respectively distinct magnetization vectors; and
a Josephson junction magnetically coupled to the magnetic junction, having a critical current responsive to a resulting joint magnetization vector comprising the superposition of the distinct magnetization vectors;
a set of control lines, configured to independently control the joint magnetization vector of each memory cell; and
a readout configured to produce a signal responsive to the critical current of a respective memory cell.