US 12,239,019 B2
Thermoelectric device
Seung Hwan Lee, Seoul (KR); and Tae Su Yang, Seoul (KR)
Assigned to LG INNOTEK CO., LTD., Seoul (KR)
Appl. No. 17/757,920
Filed by LG INNOTEK CO., LTD., Seoul (KR)
PCT Filed Dec. 16, 2020, PCT No. PCT/KR2020/018416
§ 371(c)(1), (2) Date Jun. 23, 2022,
PCT Pub. No. WO2021/132974, PCT Pub. Date Jul. 1, 2021.
Claims priority of application No. 10-2019-0173753 (KR), filed on Dec. 24, 2019.
Prior Publication US 2023/0041393 A1, Feb. 9, 2023
Int. Cl. H10N 10/17 (2023.01); H10N 10/01 (2023.01); H10N 10/855 (2023.01)
CPC H10N 10/17 (2023.02) [H10N 10/01 (2023.02); H10N 10/855 (2023.02)] 12 Claims
OG exemplary drawing
 
1. A thermoelectric element comprising:
a first substrate;
a first buffer layer disposed on the first substrate;
a first electrode disposed on the first buffer layer;
a P-type thermoelectric leg and an N-type thermoelectric leg disposed on the first electrode;
a second electrode disposed on the P-type thermoelectric leg and the N-type thermoelectric leg;
a second buffer layer disposed on the second electrode; and
a second substrate disposed on the second buffer layer,
wherein the first substrate is an aluminum substrate,
wherein the second substrate is a copper substrate,
wherein an aluminum oxide layer is disposed between the first substrate and the first buffer layer,
wherein the first buffer layer and the second buffer layer include a silicone resin and an inorganic material,
wherein a Young's modulus of the second buffer layer is less than a Young's modulus of the first buffer layer,
wherein a thickness of the second buffer layer is thicker than a thickness of the first buffer layer, and
wherein the Young's modulus of the second buffer layer is 1 to 65 MPa.