US 12,238,992 B2
Display device, electronic device, and method of manufacturing the display device
Myounggeun Cha, Seoul (KR); Soyoung Koo, Hwaseong-si (KR); Donghwan Shim, Hwaseong-si (KR); and Sanggun Choi, Suwon-si (KR)
Assigned to Samsung Display Co., Ltd., Yongin-si (KR)
Filed by Samsung Display Co., Ltd., Yongin-si (KR)
Filed on May 26, 2022, as Appl. No. 17/825,724.
Claims priority of application No. 10-2021-0078318 (KR), filed on Jun. 16, 2021.
Prior Publication US 2022/0406877 A1, Dec. 22, 2022
Int. Cl. H10K 59/131 (2023.01); H10K 59/12 (2023.01); H10K 71/00 (2023.01)
CPC H10K 59/131 (2023.02) [H10K 71/00 (2023.02); H10K 59/1201 (2023.02)] 24 Claims
OG exemplary drawing
 
1. A display device comprising:
a display panel comprising a base layer comprising a display area comprising a first area and a second area adjacent to the first area and a peripheral area adjacent to the display area, an insulating layer on the base layer, and first and second pixels on the base layer,
the first pixel comprising:
a first light emitting element in the first area; and
a first pixel circuit electrically connected to the first light emitting element,
the second pixel comprising:
a second light emitting element in the second area; and
a second pixel circuit electrically connected to the second light emitting element and in the second area,
the first pixel circuit comprising:
a first transistor comprising an oxide semiconductor pattern comprising a drain area, an active area, and a source area, and a gate overlapping the active area and in the second area or the peripheral area;
a second transistor comprising a silicon semiconductor pattern comprising a drain area, an active area, and a source area, and a gate overlapping the active area and in the second area or the peripheral area; and
a connection line electrically connecting the first transistor or the second transistor to the first light emitting element, overlapping at least the first area, on the same layer as the oxide semiconductor pattern, and comprising a transparent conductive oxide.