US 12,238,952 B2
Light emitting diode, method of manufacturing the same, and light emitting device
Linlin Wang, Beijing (CN); and Juanjuan You, Beijing (CN)
Assigned to BOE TECHNOLOGY GROUP CO., LTD., Beijing (CN)
Appl. No. 17/279,664
Filed by BOE TECHNOLOGY GROUP CO., LTD., Beijing (CN)
PCT Filed Jul. 8, 2020, PCT No. PCT/CN2020/100785
§ 371(c)(1), (2) Date Mar. 25, 2021,
PCT Pub. No. WO2021/004469, PCT Pub. Date Jan. 14, 2021.
Claims priority of application No. 201910625633.4 (CN), filed on Jul. 11, 2019.
Prior Publication US 2022/0037614 A1, Feb. 3, 2022
Int. Cl. H10K 50/824 (2023.01); H10K 50/13 (2023.01); H10K 50/844 (2023.01); H10K 71/00 (2023.01); H10K 102/00 (2023.01)
CPC H10K 50/824 (2023.02) [H10K 50/131 (2023.02); H10K 50/844 (2023.02); H10K 71/00 (2023.02); H10K 2102/00 (2023.02); H10K 2102/351 (2023.02)] 16 Claims
OG exemplary drawing
 
1. A light emitting diode, comprising a first electrode, a light-emitting functional layer and a second electrode which are laminated, the first electrode is a transparent electrode, wherein
the second electrode is consisted of a metal electrode layer and a semiconductor auxiliary layer, the metal electrode layer is attached to the light-emitting functional layer, the semiconductor auxiliary layer is located on a surface, away from the light-emitting functional layer, of the metal electrode layer,
the metal electrode layer is made of a magnesium-silver alloy, a thickness of the metal electrode layer is between 3 nm and 5 nm,
the semiconductor auxiliary layer is made of indium zinc oxide, and a thickness of the semiconductor auxiliary layer is between 100 nm and 130 nm,
wherein the second electrode has a light transmittance ranging from 65% to 70% for light having a wavelength of 400 nm to 500 nm.