US 12,238,947 B2
Solid-state imaging device, method of manufacturing solid-state imaging device, and electronic equipment
Yukio Kaneda, Kanagawa (JP); and Nobuyuki Kuboi, Kanagawa (JP)
Assigned to SONY SEMICONDUCTOR SOLUTIONS CORPORATION, Kanagawa (JP)
Appl. No. 17/432,426
Filed by SONY SEMICONDUCTOR SOLUTIONS CORPORATION, Kanagawa (JP)
PCT Filed Jan. 30, 2020, PCT No. PCT/JP2020/003449
§ 371(c)(1), (2) Date Aug. 19, 2021,
PCT Pub. No. WO2020/179300, PCT Pub. Date Sep. 10, 2020.
Claims priority of application No. 2019-038974 (JP), filed on Mar. 4, 2019.
Prior Publication US 2022/0020819 A1, Jan. 20, 2022
Int. Cl. H10K 39/32 (2023.01); A61B 1/05 (2006.01)
CPC H10K 39/32 (2023.02) [A61B 1/05 (2013.01)] 12 Claims
OG exemplary drawing
 
1. A solid-state imaging device, comprising:
a first photoelectric conversion portion that includes:
a first electrode;
a first photoelectric conversion layer electrically connected to the first electrode; and
a second electrode on a first surface of the first photoelectric conversion layer, wherein
the second electrode is on a light incidence side of the first photoelectric conversion portion, and
the first photoelectric conversion layer has a protrusion region; and
a second photoelectric conversion portion on the light incidence side of the first photoelectric conversion portion, wherein
the second photoelectric conversion portion includes a third electrode, and
the protrusion region of the first photoelectric conversion layer protrudes from a portion of the first photoelectric conversion layer and reaches to the third electrode.