US 12,238,946 B2
Perovskite/silicon heterojunction tandem solar cell and preparation method thereof
Enbing Bi, Anhui (CN); Ted Tie Guo, Anhui (CN); and Qiankai Ba, Anhui (CN)
Assigned to Advanced Solar Technology Institute, Xuancheng, Anhui (CN)
Appl. No. 18/556,676
Filed by Advanced Solar Technology Institute, Xuancheng, Anhui (CN)
PCT Filed Mar. 15, 2023, PCT No. PCT/CN2023/081524
§ 371(c)(1), (2) Date Oct. 23, 2023,
PCT Pub. No. WO2023/185464, PCT Pub. Date Oct. 5, 2023.
Claims priority of application No. 202210319630.X (CN), filed on Mar. 29, 2022.
Prior Publication US 2024/0244853 A1, Jul. 18, 2024
Int. Cl. H10K 30/57 (2023.01); H10K 30/10 (2023.01); H10K 30/40 (2023.01); H10K 30/85 (2023.01); H10K 71/15 (2023.01); H10K 85/50 (2023.01)
CPC H10K 30/57 (2023.02) [H10K 30/10 (2023.02); H10K 30/40 (2023.02); H10K 30/85 (2023.02); H10K 71/15 (2023.02); H10K 85/50 (2023.02)] 4 Claims
OG exemplary drawing
 
1. A perovskite/silicon heterojunction tandem solar cell, consisting of a silicon-based sub-cell, a perovskite sub-cell laminated on the silicon-based sub-cell, and intermediate layers or recombination junctions arranged between the silicon-based sub-cell and the perovskite sub-cell, wherein the intermediate layers or the recombination junctions are formed by a p-type heavily-doped amorphous silicon layer and an n-type heavily-doped amorphous silicon layer,
the p-type heavily-doped amorphous silicon layer has a thickness of 1-30 nm and a doping concentration of 1018-1020 cm−3; and the n-type heavily-doped amorphous silicon layer has a thickness of 1-30 nm and a doping concentration of 1019-1020 cm−3,
the tandem solar cell is of an n-i-p tandem structure in which the silicon-based sub-cell consists of a first metal electrode, a first transparent conductive layer, an n-type doped amorphous silicon layer, a first intrinsic amorphous silicon layer, an N-type monocrystalline silicon layer and a second intrinsic amorphous silicon layer that are laminated sequentially from bottom to top, the perovskite sub-cell consists of a first electron transport layer, a second electron transport layer, a perovskite absorber layer, a first hole transport layer, a second hole transport layer, a second transparent conductive layer and a second metal electrode layer that are laminated sequentially from bottom to top, and the intermediate layers or the recombination junctions are the p-type heavily-doped amorphous silicon layer and the n-type heavily-doped amorphous silicon layer that are laminated between the second intrinsic amorphous silicon layer and the first electron transport layer sequentially from bottom to top; or
the tandem solar cell is of a p-i-n tandem structure in which the silicon-based sub-cell consists of a first metal electrode, a first transparent conductive layer, a p-type doped amorphous silicon layer, a first intrinsic amorphous silicon layer, an N-type monocrystalline silicon layer and a second intrinsic amorphous silicon layer that are laminated sequentially from bottom to top, the perovskite sub-cell consists of a first hole transport layer, a second hole transport layer, a perovskite absorber layer, a first electron transport layer, a second electron transport layer, a second transparent conductive layer and a second metal electrode layer that are laminated sequentially from bottom to top, and the intermediate layers or the recombination junctions are the n-type heavily-doped amorphous silicon layer and the p-type heavily-doped amorphous silicon layer that are laminated between the second intrinsic amorphous silicon layer and the first hole transport layer sequentially from bottom to top,
wherein the first hole transport layer is made of one or more of nickel oxide, molybdenum oxide, cuprous oxide, copper iodide, copper phthalocyanine, cuprous thiocyanate, reduced graphene oxide, poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] PTAA), 2,2′,7,7′-tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9′-spirobifluorene (Spiro-OMeTAD), poly[bis(4-phenyl)(4-butylphenyl)amine] (Poly-TPD), poly(3-hexylthiophene-2,5-diyl) (P3HT), N2,N2,N2′,N2′,N7,N7,N7′,N7′-octa(4-methoxyphenyl)spiro[fluorene-9,9′-xanthene]-2,2′,7,7′-tetraamine (X60), N2,N7-bis(4-methoxyphenyl)-N2,N7-bis(2-spiro[fluorene-9,9′-xanthene])-spiro[fluorene-9,9′-xanthene]-2,7-diamine (X55), poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT:PSS), 2,2,7,7-tetrakis(N,N-di-p-tolyl)amino-9,9-spirobifluorene (Spiro-TTB), and polyvinylcarbazole (PVK),
wherein when the tandem solar cell is of the p-i-n tandem structure, the first hole transport layer contacts the intermediate layers or the recombination junctions.