US 12,238,938 B1
Random number generators including magnetic-tunnel-junction layer stacks
Vinayak Bharat Naik, Singapore (SG); Jian Peng Chan, Singapore (SG); and Seidikkurippu Nellainayagam Piramanayagam, Singapore (SG)
Assigned to GlobalFoundries Singapore Pte. Ltd., Singapore (SG)
Filed by GlobalFoundries Singapore Pte. Ltd., Singapore (SG)
Filed on May 6, 2024, as Appl. No. 18/655,453.
Int. Cl. H10B 61/00 (2023.01); G06F 7/58 (2006.01); H10N 50/10 (2023.01)
CPC H10B 61/22 (2023.02) [G06F 7/588 (2013.01); H10N 50/10 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A structure for a random number generator, the structure comprising:
a first write line having a first end and a second end;
a first source line;
a second source line;
a first transistor connected by the first source line to the first end of the first write line;
a second transistor connected by the second source line to the second end of the first write line; and
a first plurality of magnetic-tunneling-junction layer stacks disposed on the first write line between the first end of the first write line and the second end of the first write line,
wherein the first write line is continuous between the first end and the second end.