US 12,238,937 B2
Magnetic tunnel junction structures and related methods
Shy-Jay Lin, Hsinchu (TW); and Mingyuan Song, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Jul. 21, 2022, as Appl. No. 17/870,695.
Application 17/870,695 is a division of application No. 16/438,193, filed on Jun. 11, 2019, granted, now 11,594,575.
Claims priority of provisional application 62/725,620, filed on Aug. 31, 2018.
Prior Publication US 2022/0359614 A1, Nov. 10, 2022
Int. Cl. H01L 43/04 (2006.01); H10B 61/00 (2023.01); H10N 50/80 (2023.01); H10N 50/85 (2023.01)
CPC H10B 61/22 (2023.02) [H10N 50/80 (2023.02); H10N 50/85 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A method, comprising:
forming a first heavy metal layer over a substrate;
forming a first magnetic layer adjacent to the first heavy metal layer, a first surface of the first magnetic layer interfacing a first surface of the first heavy metal layer;
forming a second magnetic layer adjacent to the first heavy metal layer, a second surface of the second magnetic layer interfacing a second surface of the first heavy metal layer, the second surface of the first heavy metal layer being opposite to the first surface of the first heavy metal layer; and
forming a magnetic tunnel junction structure vertically adjacent to one or more of the first heavy metal layer or the first magnetic layer, the magnetic tunnel junction including a reference layer, a tunneling barrier layer and a free layer,
wherein a combined thickness of the first magnetic layer and the second magnetic layer is smaller than or equal to one third of a thickness of the free layer of the magnetic tunnel junction structure.