US 12,238,936 B2
Memory device
Yuichi Ito, Seoul (KR); and Taichi Igarashi, Seoul (KR)
Assigned to Kioxia Corporation, Tokyo (JP)
Filed by Kioxia Corporation, Tokyo (JP)
Filed on Mar. 2, 2022, as Appl. No. 17/684,736.
Claims priority of application No. 2021-146831 (JP), filed on Sep. 9, 2021.
Prior Publication US 2023/0071302 A1, Mar. 9, 2023
Int. Cl. H10B 61/00 (2023.01); H10N 50/01 (2023.01); H10N 50/80 (2023.01); H10N 50/85 (2023.01)
CPC H10B 61/10 (2023.02) [H10N 50/01 (2023.02); H10N 50/80 (2023.02); H10N 50/85 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A memory device comprising:
a switching element including a first conductive layer, a second conductive layer, and a variable resistive layer between the first conductive layer and the second conductive layer; and
a memory element electrically connected in series with the switching element,
wherein
at least one of the first conductive layer or the second conductive layer includes
a first layer,
a second layer between the first layer and the variable resistive layer, and
a third layer between the first layer and the second layer,
each of the first layer and the second layer is selected from a layer including carbon, a layer including nitrogen and carbon, a layer including nitrogen and titanium, a layer including nitrogen and tantalum, a layer including tungsten, a layer including nitrogen and tungsten, and a layer including platinum, and
the third layer includes at least one selected from lithium, sodium, magnesium, calcium, titanium, or lanthanum.