US 12,238,929 B2
Memory device
Mutsumi Okajima, Mie (JP)
Assigned to Kioxia Corporation, Tokyo (JP)
Filed by Kioxia Corporation, Tokyo (JP)
Filed on Jun. 16, 2021, as Appl. No. 17/349,126.
Application 17/349,126 is a continuation of application No. PCT/JP2019/035567, filed on Sep. 10, 2019.
Prior Publication US 2021/0313340 A1, Oct. 7, 2021
Int. Cl. H10B 43/30 (2023.01); H10B 43/10 (2023.01); H10B 43/20 (2023.01)
CPC H10B 43/30 (2023.02) [H10B 43/10 (2023.02); H10B 43/20 (2023.02)] 5 Claims
OG exemplary drawing
 
1. A memory device comprising:
a first conductor and a charge storage film extending along a first direction crossing a surface of a substrate;
a first semiconductor of a first conductive type;
a second semiconductor and a third semiconductor each of a second conductive type; and
a first stack comprising a second conductor, a first insulator, and a third conductor sequentially stacked along the first direction and each extending along a second direction in a first plane parallel to the surface of the substrate,
wherein
the first conductor, the charge storage film, the first semiconductor, and the first stack are above the substrate and arranged in this order along a third direction crossing the second direction in the first plane,
the second semiconductor is in contact with the first semiconductor and the second conductor, between the second conductor or the first insulator and the charge storage film, and
the third semiconductor is in contact with the first semiconductor and the third conductor, between the third conductor or the first insulator and the charge storage film.