| CPC H10B 12/36 (2023.02) [H10B 12/053 (2023.02); H10B 12/315 (2023.02); H01L 21/283 (2013.01)] | 11 Claims |
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1. A semiconductor device, comprising:
a substrate having a trench therein;
a pair of source/drain regions disposed in the substrate at opposite sides of the trench;
a metal-containing layer disposed below the trench, wherein the metal-containing layer comprises a metal silicide layer, the metal-containing layer and the substrate on opposite sidewalls of the trench collectively form a channel region of the semiconductor device; and
a gate structure disposed in the trench, the gate structure comprising:
a gate dielectric layer disposed on opposite sidewalls of the trench;
a buffer layer disposed on the metal-containing layer; and
a gate conductive layer disposed on the buffer layer and filling into the trench.
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