a plurality of transistors, distributed in different layers and stacked along the direction perpendicular to the base substrate;

a word line, penetrating the different layers and extending in the direction perpendicular to the base substrate;

a plurality of capacitors, connected with the plurality of transistors in a one-to-one correspondence; wherein a capacitor comprises a first electrode and a second electrode; a transistor comprises a first source/drain electrode, a second source/drain electrode, and a semiconductor layer surrounding a sidewall of the word line; the first source/drain electrode is connected with a first electrode of a corresponding capacitor;

first insulating layers and conductive layers, alternately distributed in the direction perpendicular to the base substrate, wherein each of the conductive layers comprises the first source/drain electrode, the second source/drain electrode and the first electrode;

wherein a region of the first electrode comprises at least one first hole penetrating each of the first insulating layers and each of the conductive layers, and further comprises a second hole penetrating the first insulating layers and the conductive layers; the word line is disposed in the second hole; an orthographic projection of a second sub-hole, located on the conductive layer, of the second hole on the base substrate falls into an orthographic projection of a first sub-hole, located on the first insulating layer, of the second hole on the base substrate; the second electrode comprises an inner electrode disposed in the first hole and insulated from each first electrode;

the semiconductor layer comprises a first groove of which opening is towards the first source/drain electrode, the first source/drain electrode fills the first groove.