US 12,238,826 B2
Semiconductor-manufacturing apparatus member and method of manufacturing the same
Hiroshi Takebayashi, Handa (JP); and Joyo Ito, Handa (JP)
Assigned to NGK INSULATORS, LTD., Nagoya (JP)
Filed by NGK INSULATORS, LTD., Nagoya (JP)
Filed on Sep. 3, 2021, as Appl. No. 17/465,955.
Claims priority of application No. 2020-205755 (JP), filed on Dec. 11, 2020.
Prior Publication US 2022/0189812 A1, Jun. 16, 2022
Int. Cl. H05B 3/14 (2006.01); H01L 21/683 (2006.01)
CPC H05B 3/143 (2013.01) [H01L 21/6833 (2013.01)] 13 Claims
OG exemplary drawing
 
1. A semiconductor-manufacturing apparatus member comprising:
an upper plate that has a wafer placement surface having a concave shape or a convex shape, that contains an electrostatic electrode, and that is composed of ceramics;
an intermediate plate that is joined to a surface of the upper plate opposite the wafer placement surface with a first metal joining layer interposed therebetween; and
a lower plate that is joined to a surface of the intermediate plate opposite the surface that is joined to the upper plate with a second metal joining layer interposed therebetween,
wherein a thermal expansion coefficient of the intermediate plate is larger than thermal expansion coefficients of the upper plate and the lower plate, and
wherein the intermediate plate is composed of a composite material of metal and ceramics or metal, and the lower plate is composed of a same ceramics as the upper plate and has a thickness that differs from that of the upper plate.