US 12,238,478 B2
Top notch slit profile for MEMS device
Ting-Jung Chen, Kaohsiung (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Apr. 18, 2022, as Appl. No. 17/722,577.
Claims priority of provisional application 63/300,346, filed on Jan. 18, 2022.
Prior Publication US 2023/0232159 A1, Jul. 20, 2023
Int. Cl. H04R 17/00 (2006.01); B81B 3/00 (2006.01); B81C 1/00 (2006.01); H04R 7/04 (2006.01); H04R 31/00 (2006.01)
CPC H04R 17/00 (2013.01) [B81B 3/0021 (2013.01); B81C 1/00158 (2013.01); H04R 7/04 (2013.01); H04R 31/006 (2013.01); B81B 2201/0257 (2013.01); B81B 2203/0127 (2013.01); B81B 2203/019 (2013.01); B81B 2207/07 (2013.01); B81C 2201/0132 (2013.01); B81C 2201/056 (2013.01); B81C 2203/0109 (2013.01); H04R 2201/003 (2013.01)] 20 Claims
OG exemplary drawing
 
14. A method comprising:
performing a first etch into a first side of a substrate, through an opening in a mask, to form a notch, which is spaced from a second side of the substrate, opposite the first side of the substrate, and has a greater width than the opening;
performing a second etch into the first side of the substrate through the opening in the mask to form a trench, which extends from the notch to the second side of the substrate and is confined to directly under the opening;
bonding a carrier substrate to the first side of the substrate with an adhesive filling the notch and the trench;
bonding an integrated circuit (IC) chip to the second side of the substrate;
removing the carrier substrate and the adhesive after the bonding of the IC chip to the second side of the substrate; and
bonding a cap substrate to the first side of the substrate after the removing, wherein the cap substrate has a cavity overlying the notch and the trench.