US 12,237,811 B2
Device emitting or detecting terahertz waves, and manufacturing method for device
Yasushi Koyama, Kamakura (JP)
Assigned to Canon Kabushiki Kaisha, Tokyo (JP)
Filed by CANON KABUSHIKI KAISHA, Tokyo (JP)
Filed on Feb. 28, 2023, as Appl. No. 18/115,054.
Application 18/115,054 is a continuation of application No. 17/027,875, filed on Sep. 22, 2020, granted, now 11,626,839.
Claims priority of application No. 2019-173084 (JP), filed on Sep. 24, 2019.
Prior Publication US 2023/0208359 A1, Jun. 29, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H03B 7/08 (2006.01); H01Q 1/22 (2006.01); H01Q 9/04 (2006.01); H01Q 9/24 (2006.01); H01Q 23/00 (2006.01)
CPC H03B 7/08 (2013.01) [H01Q 1/2283 (2013.01); H01Q 9/0457 (2013.01); H01Q 9/24 (2013.01); H01Q 23/00 (2013.01)] 17 Claims
OG exemplary drawing
 
1. A device comprising:
a first antenna arranged on a substrate, the first antenna comprising a first semiconductor layer having terahertz-wave gain and a first conductor layer;
a second antenna arranged on the substrate, the second antenna comprising a second semiconductor layer having terahertz-wave gain and a second conductor layer;
a third conductor layer arranged on the substrate and electrically connecting the first antenna and the second antenna; and
a shunt device arranged on the substrate and electrically connected to the third conductor layer,
wherein, in planar view, the shunt device does not overlap with at least the first conductor layer.