providing a base substrate;

forming a pattern comprising a first epitaxial structure on the base substrate through a patterning process such that the first epitaxial structure has a first groove in a mesh shape;

forming a first dielectric layer on a side of the first epitaxial structure away from the base substrate, to form a second groove in a mesh shape; and

forming a metal material in the second groove on a side of the first dielectric layer away from the base substrate through a patterning process, to form the metal mesh,

wherein the forming a pattern comprising a first epitaxial structure on the base substrate through a patterning process comprises:

depositing a second dielectric material layer on the base substrate, and then curing the second dielectric material layer deposited on the base substrate;

forming a third dielectric material layer on a side of the second dielectric material layer away from the base substrate, and forming a third dielectric layer with a first hollow out pattern through a patterning process;

etching the second dielectric material layer with the third dielectric layer as a mask, to form a second dielectric layer with a second hollow out pattern; and

removing the third dielectric layer such that the second dielectric layer is used as the first epitaxial structure and the second hollow out pattern is used as the second groove.