US 12,237,441 B2
Light-emitting device and method for manufacturing the same
Xiaoliang Liu, Fujian (CN); Xiushan Zhu, Fujian (CN); Min Huang, Fujian (CN); Gaolin Zheng, Fujian (CN); Anhe He, Fujian (CN); Kang-Wei Peng, Fujian (CN); and Su-Hui Lin, Fujian (CN)
Assigned to XIAMEN SAN'AN OPTOELECTRONICS CO., LTD., Fujian Province (CN)
Filed by XIAMEN SAN'AN OPTOELECTRONICS CO., LTD., Fujian Province (CN)
Filed on Sep. 1, 2021, as Appl. No. 17/464,355.
Claims priority of application No. 202010913769.8 (CN), filed on Sep. 3, 2020.
Prior Publication US 2022/0069170 A1, Mar. 3, 2022
Int. Cl. H01L 33/38 (2010.01); H01L 33/24 (2010.01); H01L 33/42 (2010.01); H01L 33/46 (2010.01)
CPC H01L 33/46 (2013.01) [H01L 33/24 (2013.01); H01L 33/42 (2013.01); H01L 2933/0016 (2013.01); H01L 2933/0025 (2013.01)] 15 Claims
OG exemplary drawing
 
1. A light-emitting device, comprising:
a light-emitting mesa structure having a first top surface and a peripheral surface connected to said first top surface;
a transparent conductive layer disposed on said first top surface of said light-emitting mesa structure, said transparent conductive layer having a second top surface;
a first insulating structure at least disposed on said peripheral surface of said light-emitting mesa structure, said first insulating structure having a third top surface and an inner tapered surface indented from said third top surface, said inner tapered surface defining an acute angle with respect to a portion of said second top surface of said transparent conductive layer under said inner tapered surface; and
a reflective layer disposed on said transparent conductive layer, said reflective layer having a first side surface in contact with said inner tapered surface of said first insulating structure,
wherein the light-emitting device further comprises a second insulating structure disposed on said transparent conductive layer to be connected to said first insulating structure, said second insulating structure being formed with a plurality of through-holes, said reflective layer extending through said through-holes to be electrically connected to said transparent conductive layer,
wherein said second insulating structure has a thickness less than a maximum thickness of said first insulating structure,
wherein said reflective layer has a thickness no greater than a maximum thickness of said first insulating structure, and
wherein said reflective layer is not overlapping said third top surface in a direction perpendicular to said third top surface of said first insulating structure.