US 12,237,440 B2
Deep UV light emitting diode
Tae Gyun Kim, Gyeonggi-do (KR); and Kyu Ho Lee, Gyeonggi-do (KR)
Assigned to Seoul Viosys Co., Ltd., Gyeonggi-do (KR)
Filed by SEOUL VIOSYS CO., LTD., Gyeonggi-do (KR)
Filed on Feb. 22, 2024, as Appl. No. 18/584,432.
Application 18/584,432 is a continuation of application No. 17/344,691, filed on Jun. 10, 2021, granted, now 11,942,573.
Application 17/344,691 is a continuation of application No. PCT/KR2019/017224, filed on Dec. 6, 2019.
Claims priority of application No. 10-2019-0004547 (KR), filed on Jan. 14, 2019.
Prior Publication US 2024/0222562 A1, Jul. 4, 2024
Int. Cl. H01L 33/38 (2010.01); H01L 33/46 (2010.01); H01L 33/62 (2010.01)
CPC H01L 33/382 (2013.01) [H01L 33/46 (2013.01); H01L 33/62 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A UV light emitting device, comprising:
a mount substrate including electrode pads;
a light source disposed on the mount substrate, wherein the light source includes:
an n-type semiconductor layer;
a mesa disposed on the n-type semiconductor layer, and including a well layer configured to emit light having an ultraviolet wavelength and a p-type semiconductor layer;
an n-ohmic contact layer in contact with the n-type semiconductor layer;
a p-ohmic contact layer in contact with the p-type semiconductor layer;
an n-bump electrically connected to the n-ohmic contact layer; and
a p-bump electrically connected to the p-ohmic contact layer,
wherein:
the mesa has a rectangular shape and includes a plurality of vias exposing the n-type semiconductor layer,
the plurality of vias are arranged in parallel to one another,
the n-type semiconductor layer includes a region having a higher band gap than a band gap of the well layer configured to emit light having the ultraviolet wavelength, and
the n-ohmic contact layer includes a plurality of contact regions spaced apart from each other by the mesa.