US 12,237,438 B2
Light-emitting device, light-emitting module including the same and display apparatus including the same
Shiwei Liu, Tong'an District (CN); Jin Xu, Tong'an District (CN); Shuijie Wang, Tong'an District (CN); Zhenni Que, Tong'an District (CN); Ke Liu, Tong'an District (CN); Chung-Ying Chang, Tong'an District (CN); and Ho-Chia Tseng, Tong'an District (CN)
Assigned to XIAMEN SAN'AN OPTOELECTRONICS CO., LTD., Fujian Province (CN)
Filed by XIAMEN SAN'AN OPTOELECTRONICS CO., LTD., Tong'an District (CN)
Filed on Nov. 15, 2021, as Appl. No. 17/454,895.
Claims priority of application No. 202011280926.2 (CN), filed on Nov. 16, 2020; and application No. 202011282176.2 (CN), filed on Nov. 16, 2020.
Prior Publication US 2022/0158028 A1, May 19, 2022
Int. Cl. H01L 33/14 (2010.01); H01L 27/15 (2006.01); H01L 33/20 (2010.01); H01L 33/46 (2010.01); H01L 33/62 (2010.01)
CPC H01L 33/145 (2013.01) [H01L 27/156 (2013.01); H01L 33/20 (2013.01); H01L 33/46 (2013.01); H01L 33/62 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A light-emitting device, comprising:
a substrate;
first and second mesa structures that are separately disposed on said substrate with a groove formed therebetween, said groove having a bottom, each of said first and second mesa structures including
a first type semiconductor layer disposed on said substrate,
an active layer disposed on said first type semiconductor layer to expose a portion of said first type semiconductor layer, and
a second type semiconductor layer disposed on said active layer to expose the exposed portion of said first type semiconductor layer, said first type semiconductor layer, said active layer and said second type semiconductor layer cooperatively defining a side surface;
at least one current blocking element that is disposed on said second type semiconductor layer of said first mesa structure to expose a portion of said second type semiconductor layer of said first mesa structure, and that extends to said side surface of said first mesa structure, said bottom of said groove and a portion of said side surface of said second mesa structure defined by said first type semiconductor layer in a continuous manner;
at least one conductive bridging element that is disposed on said at least one current blocking element and that includes a body portion, a first portion extending from said body portion and electrically connected to said second type semiconductor layer of said first mesa structure, and a second portion extending from said body portion and electrically connected to said first type semiconductor layer of said second mesa structure;
a first conductive pad that is located in corresponding position above said first mesa structure and that is electrically connected to said first type semiconductor layer of said first mesa structure; and
a second conductive pad that is located in corresponding position above said second mesa structure and that is electrically connected to said second type semiconductor layer of said second mesa structure,
wherein, said at least one conductive bridging element has a projection image that is spaced apart from those of said first and second conductive pads in a plan view of said light-emitting device, and
wherein said light-emitting device includes two of said conductive bridging elements, the projection image of said first conductive pad having an intervening part located between the projection images of said two of said conductive bridging elements.