US 12,237,433 B2
Double-sided solar cell and preparation method therefor
Yong Ren, Zhejiang (CN); Yue He, Zhejiang (CN); Hailiang Ren, Zhejiang (CN); Shuai Guo, Zhejiang (CN); Lei Zhang, Zhejiang (CN); Dong Zhou, Zhejiang (CN); and Deshuang Chen, Zhejiang (CN)
Assigned to HENGDIAN GROUP DMEGC MAGNETICS CO., LTD, Zhejiang (CN)
Appl. No. 18/043,174
Filed by HENGDIAN GROUP DMEGC MAGNETICS CO., LTD, Zhejiang (CN)
PCT Filed Apr. 19, 2021, PCT No. PCT/CN2021/088063
§ 371(c)(1), (2) Date Feb. 27, 2023,
PCT Pub. No. WO2022/205523, PCT Pub. Date Oct. 6, 2022.
Claims priority of application No. 202110334916.0 (CN), filed on Mar. 29, 2021.
Prior Publication US 2024/0014340 A1, Jan. 11, 2024
Int. Cl. H01L 31/068 (2012.01); H01L 31/032 (2006.01)
CPC H01L 31/0684 (2013.01) [H01L 31/0324 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A bifacial solar cell, comprising a silicon wafer having a PN junction, and a front-side first silicon oxide layer, a front-side second silicon oxide layer, a front-side first nitrogen-containing silicon compound layer, a front-side second nitrogen-containing silicon compound layer and a front-side third silicon oxide layer that are located on the N-type side of the silicon wafer and stacked in sequence in a direction away from the silicon wafer; a passivation layer, a back-side silicon oxide layer, a back-side first nitrogen-containing silicon compound layer and a back-side second nitrogen-containing silicon compound layer that are located on the P-type side of the silicon wafer and stacked in sequence in the direction away from the silicon wafer,
wherein each of the front-side first nitrogen-containing silicon compound layer and the back-side first nitrogen-containing silicon compound layer is a SiNx1 layer, wherein x1 is independently 0.75 to 1.34, and
wherein the front-side second nitrogen containing silicon compound layer is a SiNx2/SiNx3/SiOxNy stacked structure stacked in sequence in the direction away from the silicon wafer, and the back-side second nitrogen-containing silicon compound layer is a SiNx2/SiNx3 stacked structure stacked in sequence in the direction away from the silicon wafer, wherein
x2 is 0.75 to 1.34,
x3 is 0.75 to 1.34,
x is 1 to 2,
y is 1 to 2, and
x1>x2>x3.