	US 12,237,432 B2
	Indirect liftoff mechanism for high-throughput, single-source laser scribing for perovskite solar modules
Austin Flick, Stanford, CA (US); and Reinhold H. Dauskardt, Menlo Park, CA (US)
Assigned to The Board of Trustees of the Leland Stanford Junior University, Stanford, CA (US)
Filed by The Board of Trustees of the Leland Stanford Junior University, Stanford, CA (US)
Filed on Sep. 11, 2023, as Appl. No. 18/244,767.
Claims priority of provisional application 63/405,279, filed on Sep. 9, 2022.
Prior Publication US 2024/0088314 A1, Mar. 14, 2024
Int. Cl. H01L 31/0463 (2014.01); B23K 26/06 (2014.01); B23K 26/0622 (2014.01); B23K 26/40 (2014.01); H01L 31/0224 (2006.01); H01L 31/05 (2014.01); B23K 103/16 (2006.01)

CPC H01L 31/0463 (2014.12) [B23K 26/0624 (2015.10); B23K 26/40 (2013.01); H01L 31/022425 (2013.01); H01L 31/0512 (2013.01); B23K 2103/172 (2018.08)]

10 Claims

1. A method for scribing an electrical or optoelectronic device, the method comprising:

depositing a transparent conductive oxide (TCO) layer on a transparent substrate;

depositing one or more active device layers on top of the TCO layer to make a multilayer stack; and

lifting off at least one layer of the multilayer stack in a liftoff pattern with a vertically selective liftoff;

wherein the liftoff pattern is defined by passing a laser beam through the substrate to be absorbed in the TCO layer and scanning a position of the laser beam such that material at or above illuminated parts of the TCO layer is lifted off;

wherein the vertically selective liftoff entails removal of a selected layer of the multilayer stack and all layers in the multilayer stack above the selected layer;

wherein the selected layer of the multilayer stack is determined by one or more processing parameters of the vertically selective liftoff.