US 12,237,430 B2
Plasmonic field-enhanced photodetector and image sensor
Hoon Kim, La Habra, CA (US)
Filed by Hoon Kim, La Habra, CA (US)
Filed on Aug. 22, 2023, as Appl. No. 18/236,805.
Application 18/236,805 is a continuation of application No. 17/574,714, filed on Jan. 13, 2022, granted, now 11,777,042.
Application 17/574,714 is a continuation of application No. 16/919,831, filed on Jul. 2, 2020, granted, now 11,245,044, issued on Feb. 8, 2022.
Claims priority of provisional application 62/961,029, filed on Jan. 14, 2020.
Prior Publication US 2023/0402556 A1, Dec. 14, 2023
Int. Cl. H01L 31/0352 (2006.01); H01L 27/146 (2006.01); H01L 31/103 (2006.01)
CPC H01L 31/035209 (2013.01) [H01L 27/14623 (2013.01); H01L 27/14665 (2013.01); H01L 31/103 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A photodetector comprising:
a metal layer that shields incident light and generates surface plasmon polaritons (SPPs);
an insulator that absorbs the generated SPPs and allows a localized electric field effect to tunnel; and
a dielectric material formed at nanoholes of the metal layer and formed over the insulator,
wherein photons of the incident light interacts with surface plasmons (SPs) generated at an interface of the metal layer with the dielectric material to generate the SPPs,
wherein a wavelength of the incident light is compressed to increase energy when the SPs is converted to the SPPs.