	US 12,237,429 B2
	Solar cell and manufacturing method thereof
Qiangjian Sun, Suzhou (CN); Shulong Lu, Suzhou (CN); Junhua Long, Suzhou (CN); Xuefei Li, Suzhou (CN); and Pan Dai, Suzhou (CN)
Assigned to SUZHOU INSTITUTE OF NANO-TECH AND NANO-BIONICS (SINANO), CHINESE ACADEMY OF SCIENCES, Jiangsu (CN)
Appl. No. 18/011,654
Filed by SUZHOU INSTITUTE OF NANO-TECH AND NANO-BIONICS (SINANO), CHINESE ACADEMY OF SCIENCES, Suzhou (CN)
PCT Filed Jun. 9, 2021, PCT No. PCT/CN2021/099062 § 371(c)(1), (2) Date Dec. 20, 2022, PCT Pub. No. WO2022/052534, PCT Pub. Date Mar. 17, 2022.
Claims priority of application No. 202010933895.X (CN), filed on Sep. 8, 2020.
Prior Publication US 2023/0335654 A1, Oct. 19, 2023
Int. Cl. H01L 31/18 (2006.01); H01L 31/0216 (2014.01); H01L 31/0224 (2006.01)

CPC H01L 31/022433 (2013.01) [H01L 31/02168 (2013.01); H01L 31/1864 (2013.01); H01L 31/184 (2013.01)]

8 Claims

1. A manufacturing method of a solar cell, comprising:

forming an electricity generation layer on a substrate, including:

forming a back-surface field layer on the substrate,

forming a photovoltaic layer on the back-surface field layer, and

forming a window layer on the photovoltaic layer;

forming an ohmic contact layer on a surface of the electricity generation layer facing away from the substrate;

forming a back electrode on a surface of the substrate facing away from the electricity generation layer;

forming a top electrode on a surface of the ohmic contact layer facing away from the electricity generation layer using a printing process;

etching the ohmic contact layer with the top electrode as a mask to expose a partial region of the electricity generation layer;

forming an anti-reflection film over the partial region by sequentially stacking and forming Ti₂O₃layer and a SiO₂layer on the partial region; and

wherein the substrate is made of an InP material.