CPC H01L 29/872 (2013.01) [G02F 1/0156 (2021.01); H01L 29/247 (2013.01); H01L 29/47 (2013.01); H01Q 15/0086 (2013.01); G02F 2202/30 (2013.01)] | 9 Claims |
1. A tuning method for active metamaterials using indium-gallium-zinc oxide (IGZO) Schottky diodes, wherein the IGZO Schottky diode comprises substrates, Schottky electrodes, amorphous IGZO active layers, and ohmic electrodes from the bottom up, comprising the following steps:
(i) metamaterials are used as the Schottky electrodes, and the amorphous IGZO active layers are used to fully cover capacitive structures in the metamaterials; the capacitive structures in the metamaterials are bonded to the amorphous IGZO active layers to form Schottky barriers;
the substrates are cleaned with DECON, deionized water, and acetone successively; wherein the DECON is a decontamination agent;
then the substrates are placed into ethanol immediately for cleaning;
finally, the substrates are cleaned with deionized water again and dried by nitrogen gas;
and
(ii) the IGZO Schottky diodes from step (i) are used to tune the metamaterials dynamically.
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