US 12,237,418 B2
Liner for a bi-layer gate helmet and the fabrication thereof
Huan-Chieh Su, Tianzhong Township (TW); Chih-Hao Wang, Baoshan Township (TW); Kuo-Cheng Chiang, Zhubei (TW); Wei-Hao Wu, Hsinchu (TW); Zhi-Chang Lin, Zhubei (TW); Jia-Ni Yu, New Taipei (TW); Yu-Ming Lin, Hsinchu (TW); and Chung-Wei Hsu, Hsinchu County (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Aug. 4, 2023, as Appl. No. 18/365,315.
Application 18/365,315 is a division of application No. 17/322,267, filed on May 17, 2021, granted, now 11,996,481.
Application 17/322,267 is a division of application No. 16/510,554, filed on Jul. 12, 2019, granted, now 11,011,625, issued on May 18, 2021.
Claims priority of provisional application 62/734,013, filed on Sep. 20, 2018.
Prior Publication US 2023/0387264 A1, Nov. 30, 2023
Int. Cl. H01L 29/51 (2006.01); H01L 21/768 (2006.01); H01L 21/8238 (2006.01); H01L 27/092 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01)
CPC H01L 29/785 (2013.01) [H01L 21/76829 (2013.01); H01L 21/823814 (2013.01); H01L 21/823821 (2013.01); H01L 21/823864 (2013.01); H01L 27/0924 (2013.01); H01L 29/511 (2013.01); H01L 29/66795 (2013.01)] 17 Claims
OG exemplary drawing
 
1. A device, comprising:
an active region;
a gate electrode disposed over the active region;
a first dielectric layer disposed over the gate electrode, wherein the first dielectric layer has a first dielectric constant;
a second dielectric layer disposed over the first dielectric layer, wherein the second dielectric layer has a second dielectric constant that is different from the first dielectric constant; and
a third dielectric layer disposed between the first dielectric layer and the second dielectric layer, wherein the third dielectric layer has a third dielectric constant that is greater than the first dielectric constant but smaller than the second dielectric constant, and wherein the third dielectric layer and the second dielectric layer have similar widths in a cross-sectional side view.