US 12,237,412 B2
Protection structures for semiconductor devices with sensor arrangements
Edward Robert Van Brunt, Raleigh, NC (US); and Sei-Hyung Ryu, Cary, NC (US)
Assigned to Wolfspeed, Inc., Durham, NC (US)
Filed by Wolfspeed, Inc., Durham, NC (US)
Filed on Nov. 3, 2020, as Appl. No. 17/087,740.
Prior Publication US 2022/0140138 A1, May 5, 2022
Int. Cl. H01L 29/78 (2006.01); H01L 27/088 (2006.01); H01L 29/10 (2006.01); H01L 29/16 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 21/8234 (2006.01)
CPC H01L 29/7815 (2013.01) [H01L 29/1095 (2013.01); H01L 29/1608 (2013.01); H01L 29/42364 (2013.01); H01L 29/66068 (2013.01); H01L 21/823481 (2013.01); H01L 21/823487 (2013.01); H01L 27/088 (2013.01); H01L 29/4238 (2013.01); H01L 29/66712 (2013.01); H01L 29/7802 (2013.01); H01L 29/7811 (2013.01)] 40 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a drift region;
a gate contact on the drift region;
a gate insulating layer between the gate contact and the drift region;
a device region that comprises a first portion of the drift region;
a sensor region that comprises a second portion of the drift region; and
a transition region between the device region and the sensor region, the transition region comprising an insulating layer between the gate contact and the drift region, the insulating layer comprising a first breakdown voltage that is higher than a second breakdown voltage of the gate insulating layer, the insulating layer having a cross-sectional stepped profile in the transition region and comprising a lower portion with opposing lower side surfaces and an upper portion with opposing upper side surfaces,
wherein the upper portion of the insulating layer is on the lower portion of the insulating layer opposite the drift region.