| CPC H01L 29/7786 (2013.01) [H01L 29/2003 (2013.01); H01L 29/2006 (2013.01); H01L 29/205 (2013.01)] | 20 Claims |
|
1. A semiconductor device, comprising:
a first electrode;
a second electrode;
a third electrode, a position of the third electrode in a first direction from the first electrode to the second electrode being between a position of the first electrode in the first direction and a position of the second electrode in the first direction;
a semiconductor member including a first semiconductor region and a second semiconductor region,
the first semiconductor region including Alx1Ga1-x1N (0≤x1<1), the first semiconductor region including a first partial region, a second partial region, a third partial region, a fourth partial region, and a fifth partial region, a second direction from the first partial region to the first electrode crossing the first direction, a direction from the second partial region to the second electrode being along the second direction, a direction from the third region to the third electrode being along the second direction, a position of the fourth partial region in the first direction being between a position of the first partial region in the first direction and a position of the third partial region in the first direction, a position of the fifth partial region in the first direction being between the position of the third partial region in the first direction and a position of the second partial region in the first direction;
the second semiconductor region including Alx2Ga1-x2N (0<x2≤1, x1<x2), the second semiconductor region including a first semiconductor portion and a second semiconductor portion, a direction from the fourth partial region to the first semiconductor portion being along the second direction, a direction from the fifth partial region to the second semiconductor portion being along the second direction, the second semiconductor portion including a first portion, a second portion, and a third portion between the first portion and the second portion, a position of the second portion in the first direction being between a position of the first portion in the first direction and the position of the second electrode in the first direction;
a first conductive member including a first conductive region and a second conductive region, the first conductive region overlapping the third electrode in the second direction, the first portion being between the fifth partial region and a part of the first conductive region, the first conductive member being electrically connected with one of the first electrode and the third electrode, or the first conductive member being configured to be electrically connected with the one of the first electrode and the third electrode;
a first insulating member including a first insulating region, the first insulating region being between the third partial region and the third electrode in the second direction;
a second insulating member including a first insulating portion and a second insulating portion, the first insulating portion being between the first portion and the first conductive region in the second direction, the second portion being between the fifth partial region and the second insulating portion; and
a first nitride member including Alx3Ga1-x3N (0≤x3<1) or Iny1Aly2Ga1-y1-y2N (0<y1≤0≤y2≤1, y1+y2≤1), the first nitride member including a first nitride region, the first nitride region being between the first insulating portion and the second insulating portion in the first direction, the first nitride region being between the third portion and the second conductive region in the second direction.
|