US 12,237,407 B2
Heterojunction bipolar transistor with amorphous semiconductor regions
Anupam Dutta, Kolkata (IN); Rajendran Krishnasamy, Essex Junction, VT (US); Vvss Satyasuresh Choppalli, Bangalore (IN); Vibhor Jain, Williston, VT (US); and Robert J. Gauthier, Jr., Williston, VT (US)
Assigned to GlobalFoundries U.S. Inc., Malta, NY (US)
Filed by GlobalFoundries U.S. Inc., Malta, NY (US)
Filed on Nov. 1, 2022, as Appl. No. 17/978,633.
Prior Publication US 2024/0145585 A1, May 2, 2024
Int. Cl. H01L 29/737 (2006.01)
CPC H01L 29/7375 (2013.01) 19 Claims
OG exemplary drawing
 
1. A structure comprising:
a heterojunction bipolar transistor comprising a collector region, a base region and an emitter region; and
at least one non-single-crystal semiconductor region in the collector region of the heterojunction bipolar transistor,
wherein the non-single-crystal semiconductor region is vertically above a sub-collector region of the heterojunction bipolar transistor and within the collector region.