	US 12,237,406 B2
	Plasma treatment on metal-oxide TFT
Soo Young Choi, Fremont, CA (US); Beom Soo Park, San Jose, CA (US); Yi Cui, San Jose, CA (US); Tae Kyung Won, San Jose, CA (US); and Dong-Kil Yim, Pleasanton, CA (US)
Assigned to Applied Materials, Inc., Santa Clara, CA (US)
Filed by Applied Materials, Inc., Santa Clara, CA (US)
Filed on Oct. 28, 2020, as Appl. No. 17/082,570.
Application 17/082,570 is a continuation of application No. 15/874,081, filed on Jan. 18, 2018, granted, now 10,854,737.
Application 15/874,081 is a continuation of application No. 15/001,156, filed on Jan. 19, 2016, granted, now 9,887,277, issued on Feb. 6, 2018.
Claims priority of provisional application 62/106,905, filed on Jan. 23, 2015.
Prior Publication US 2021/0043757 A1, Feb. 11, 2021
Int. Cl. H01L 29/786 (2006.01); H01L 21/02 (2006.01); H01L 23/31 (2006.01); H01L 29/66 (2006.01)

CPC H01L 29/66969 (2013.01) [H01L 21/0234 (2013.01); H01L 23/3171 (2013.01); H01L 29/7869 (2013.01); H01L 2924/0002 (2013.01)]

21 Claims

1. A method of forming a thin film transistor, comprising:

depositing a semiconductor layer over a gate dielectric, a gate electrode and a substrate;

depositing a conductive layer on the semiconductor layer;

forming source and drain electrodes;

depositing one or more inorganic passivation layers over the source and drain electrodes, wherein depositing the one or more inorganic passivation layer comprises igniting a plasma at a first RF power; and

exposing the one or more inorganic passivation layers to an inert plasma during a power lift operation, wherein the inert plasma is formed at a second RF power less than the first RF power.