US 12,237,405 B2
Semiconductor devices and methods of manufacturing thereof
Yi-Ruei Jhan, Keelung (TW); Kuan-Ting Pan, Taipei (TW); Kuo-Cheng Chiang, Zhubei (TW); Kuan-Lun Cheng, Hsinchu (TW); and Chih-Hao Wang, Baoshan Township (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Jul. 26, 2022, as Appl. No. 17/873,832.
Application 17/873,832 is a division of application No. 16/926,258, filed on Jul. 10, 2020, granted, now 11,495,677.
Prior Publication US 2022/0359712 A1, Nov. 10, 2022
Int. Cl. H01L 29/66 (2006.01); H01L 21/8234 (2006.01); H01L 27/088 (2006.01); H01L 29/165 (2006.01); H01L 29/78 (2006.01)
CPC H01L 29/6681 (2013.01) [H01L 21/823418 (2013.01); H01L 21/823431 (2013.01); H01L 21/823437 (2013.01); H01L 21/823481 (2013.01); H01L 27/0886 (2013.01); H01L 29/165 (2013.01); H01L 29/66545 (2013.01); H01L 29/7848 (2013.01); H01L 29/785 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of fabricating a semiconductor device, comprising:
forming a plurality of fin structures extending along a first direction;
forming a dummy fin structure between two adjacent fin structures, wherein the dummy fin structure also extends along the first direction, and wherein forming the dummy fin structure includes forming a high-k dielectric layer over a deformable layer;
recessing portions of each fin structure;
forming source/drain structures over the recessed fin structures; and
deforming the deformable layer of the dummy fin structure to apply either tensile stress or compressive stress on the source/drain structures.