US 12,237,404 B2
Methods for increasing germanium concentration of surfaces of a silicon germanium portion of a Fin and resulting semiconductor devices
Che-Yu Lin, Hsinchu (TW); Chien-Hung Chen, Hsinchu (TW); and Wen-Chu Hsiao, Tainan (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Jun. 16, 2023, as Appl. No. 18/336,328.
Application 18/336,328 is a continuation of application No. 17/322,526, filed on May 17, 2021, granted, now 11,721,745.
Application 17/322,526 is a continuation of application No. 16/371,436, filed on Apr. 1, 2019, granted, now 11,011,623, issued on May 18, 2021.
Claims priority of provisional application 62/692,018, filed on Jun. 29, 2018.
Prior Publication US 2023/0343858 A1, Oct. 26, 2023
Int. Cl. H01L 29/66 (2006.01); H01L 21/02 (2006.01); H01L 21/265 (2006.01); H01L 21/30 (2006.01); H01L 21/3065 (2006.01); H01L 21/3105 (2006.01); H01L 21/311 (2006.01); H01L 21/762 (2006.01); H01L 29/08 (2006.01); H01L 29/165 (2006.01); H01L 29/40 (2006.01); H01L 29/78 (2006.01)
CPC H01L 29/66795 (2013.01) [H01L 21/02164 (2013.01); H01L 21/02271 (2013.01); H01L 21/02381 (2013.01); H01L 21/02532 (2013.01); H01L 21/3003 (2013.01); H01L 21/3065 (2013.01); H01L 21/31053 (2013.01); H01L 21/31116 (2013.01); H01L 21/76224 (2013.01); H01L 29/0847 (2013.01); H01L 29/165 (2013.01); H01L 29/401 (2013.01); H01L 29/66545 (2013.01); H01L 29/7833 (2013.01); H01L 29/7851 (2013.01); H01L 21/26513 (2013.01); H01L 29/6656 (2013.01); H01L 29/66636 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method comprising:
forming a fin that protrudes from a substrate, a top portion of the fin comprising a first semiconductor material, wherein a bottom portion of the fin and the substrate comprise a second semiconductor material different from the first semiconductor material; and
exposing a top surface and sidewalls of the top portion of the fin to a hydrogen plasma, wherein after exposing the top surface and the sidewalls of the top portion of the fin to the hydrogen plasma, a germanium concentration increases in a direction extending from a center portion of the top portion of the fin to edge portions of the top portion of the fin.