US 12,237,401 B2
Semiconductor chip
Cheng-Tien Wan, Hsinchu (TW); Yao-Tsung Huang, Hsinchu (TW); Yun-San Huang, Hsinchu (TW); Ming-Cheng Lee, Zhubei (TW); and Wei-Che Huang, Hsinchu County (TW)
Assigned to MEDIATEK INC., Hsin-Chu (TW)
Filed by MEDIATEK Inc., Hsin-Chu (TW)
Filed on Aug. 22, 2022, as Appl. No. 17/821,195.
Application 17/821,195 is a division of application No. 17/001,784, filed on Aug. 25, 2020, granted, now 11,450,756.
Application 17/001,784 is a division of application No. 16/121,730, filed on Sep. 5, 2018, granted, now 10,790,380, issued on Sep. 29, 2020.
Claims priority of provisional application 62/574,772, filed on Oct. 20, 2017.
Prior Publication US 2022/0406921 A1, Dec. 22, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 29/66 (2006.01); H01L 21/8234 (2006.01); H01L 21/8238 (2006.01); H01L 21/84 (2006.01); H01L 27/088 (2006.01); H01L 27/12 (2006.01); H01L 29/417 (2006.01); H01L 29/78 (2006.01)
CPC H01L 29/66795 (2013.01) [H01L 21/823431 (2013.01); H01L 21/823821 (2013.01); H01L 21/845 (2013.01); H01L 27/0886 (2013.01); H01L 27/1211 (2013.01); H01L 29/41791 (2013.01); H01L 29/66818 (2013.01); H01L 29/785 (2013.01); H01L 29/7851 (2013.01)] 11 Claims
OG exemplary drawing
 
1. A semiconductor chip, comprises:
a substrate;
a transistor formed on the substrate and comprising:
an insulation layer; and
a fin comprising a base portion and a protrusion connected with the base portion, wherein the protrusion is projected with respect to an upper surface of the base portion and has a recess recessed with respect to the upper surface;
wherein the transistor comprises a plurality of the fins, the protrusion of each fin has an upper surface, and a width of the upper surface of the protrusion of each fin is substantially equal.