US 12,237,397 B2
Partial directional etch method and resulting structures
Shiang-Bau Wang, Pingzchen (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Jun. 28, 2023, as Appl. No. 18/343,555.
Application 18/343,555 is a continuation of application No. 17/809,055, filed on Jun. 27, 2022, granted, now 11,728,407.
Application 17/809,055 is a continuation of application No. 17/026,012, filed on Sep. 18, 2020, granted, now 11,374,110, issued on Jun. 28, 2022.
Claims priority of provisional application 62/981,838, filed on Feb. 26, 2020.
Prior Publication US 2023/0343853 A1, Oct. 26, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 29/66 (2006.01); H01L 27/088 (2006.01); H01L 29/78 (2006.01)
CPC H01L 29/66545 (2013.01) [H01L 27/0886 (2013.01); H01L 29/66795 (2013.01); H01L 29/7851 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A device comprising:
a fin extending upwards from a substrate;
an isolation material at least partially surrounding the fin;
a metal gate electrode and gate dielectric extending over a top and sidewalls of the fin; and
a polysilicon material extending along respective bottom portions of sidewalls of the metal gate electrode, the polysilicon material being interjacent the gate dielectric and the substrate in a direction perpendicular to the major surface of the substrate.