US 12,237,395 B2
High electron mobility transistor and method for forming the same
Ko-Wei Lin, Taichung (TW); Chun-Chieh Chiu, Keelung (TW); Chun-Ling Lin, Tainan (TW); Shu Min Huang, Tainan (TW); and Hsin-Fu Huang, Tainan (TW)
Assigned to UNITED MICROELECTRONICS CORP., Hsin-Chu (TW)
Filed by UNITED MICROELECTRONICS CORP., Hsin-Chu (TW)
Filed on Feb. 20, 2022, as Appl. No. 17/676,216.
Claims priority of application No. 202210078217.9 (CN), filed on Jan. 24, 2022.
Prior Publication US 2023/0238445 A1, Jul. 27, 2023
Int. Cl. H01L 29/66 (2006.01); H01L 21/324 (2006.01); H01L 21/768 (2006.01); H01L 29/20 (2006.01); H01L 29/778 (2006.01)
CPC H01L 29/66431 (2013.01) [H01L 21/3245 (2013.01); H01L 21/76841 (2013.01); H01L 29/2003 (2013.01); H01L 29/7786 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A high electron mobility transistor, comprising:
a channel layer disposed on a substrate;
a barrier layer disposed on the channel layer;
a passivation layer disposed on the barrier layer; and
a contact structure disposed on the passivation layer and extending through the passivation layer and the barrier layer to directly contact the channel layer, wherein the contact structure comprises:
a liner; and
a metal layer directly disposed on the liner, wherein the metal layer comprises a metal material doped throughout with a first additive and a second additive, and a weight percentage of the first additive in the metal layer is between 0% and 2%, a weight percentage of the second additive in the metal layer is between 0% and 1%.