	US 12,237,393 B2
	Method of fabricating a semiconductor device
Chung-Ting Ko, Kaohsiung (TW); Bi-Fen Wu, Taichung (TW); and Chi-On Chui, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Jun. 30, 2022, as Appl. No. 17/853,955.
Application 17/853,955 is a continuation of application No. 16/735,660, filed on Jan. 6, 2020, granted, now 11,417,748.
Claims priority of provisional application 62/927,700, filed on Oct. 30, 2019.
Prior Publication US 2022/0336617 A1, Oct. 20, 2022
Int. Cl. H01L 29/49 (2006.01); H01L 21/28 (2006.01); H01L 21/3215 (2006.01); H01L 21/8234 (2006.01); H01L 27/088 (2006.01)

CPC H01L 29/4966 (2013.01) [H01L 21/28088 (2013.01); H01L 21/3215 (2013.01); H01L 21/823431 (2013.01); H01L 21/82345 (2013.01); H01L 27/0886 (2013.01)]

20 Claims

1. A method of fabricating a semiconductor device, comprising:

forming a work function setting layer on a substrate;

growing a first work function tuning layer on a first portion of the work function setting layer and growing a second work function tuning layer on a second portion of the work function setting layer in different growth rates under a same deposition process; and

performing a surface treatment on the second portion of the work function setting layer prior to growing the first work function tuning layer and the second work function tuning layer.